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Shenzhen Quanyuantong Electronics Co., Ltd.

City:shenzhen

Contact Person:MrsYolanda

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China FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO-3P China Made Bulk New In Stock wholesale

FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO-3P China Made Bulk New In Stock

Name: FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO3P China Made Bulk New In Stock
Brand: Original
Price: 0.35 USD

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Application :Amplifier

Supplier Type :Original manufacturer, Agency, Retailer

Cross Reference :China Made, Bulk New

Media Available :Photo

Place of Origin :US

Brand Name :Original

Model Number :FGA25N120ANTD

Package Type :Throught Hole

Type :Triode Transistor

Package / Case :TO-3P

Packaging :Tube

Lead Free Status / RoHS Status :Lead free / RoHS Compliant

Shipment method :DHL/UPS/Fedex/etc

BEST Price :Contact us!

Supply Ability :859000PCS/Day

Packaging Details :Box/Reel/Tube

Port :Shenzhen/Hongkong/Guangzhou

MOQ :10

Price :$0.35 - $2.00 / Piece

Delivery Time :1-7 days

Payment Terms :T/T, Western Union, Paypal,Alibaba trade order

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Product Detail

Packaging	Tube
Part Status	Active
IGBT Type	NPT and Trench
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	50A
Current - Collector Pulsed (Icm)	90A
Vce(on) (Max) @ Vge, Ic	2.65V @ 15V, 50A
Power - Max	312W
Switching Energy	4.1mJ (on), 960µJ (off)
Input Type	Standard
Gate Charge	200nC
Td (on/off) @ 25°C	50ns/190ns
Test Condition	600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)	350ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P
Base Part Number	FGA25N120A